Product Summary

The MG75J2YS50 is a TOSHIBA GTR Module, which is Silicon N Channel IGBT. It is designed for High Power Switching Applications and Motor Control Applications.

Parametrics

MG75J2YS50 absolute maximum ratings: (1)Collector-emitter voltage: 600 V; (2)Gate-emitter voltage: ±20 V; (3)Collector current: 150 A; (4)Forward current: 150 A; (5)Collector power dissipation (Tc = 25℃): 390 W; (6)Junction temperature: 150 ℃; (7)Storage temperature range: -40 ~ 125 ℃; (8)Isolation voltage: 2500 (AC 1 min.) V; (9)Screw torque (Terminal / mounting): 3 / 3 N·m.

Features

MG75J2YS50 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Includes a complete half bridge in one package; (4)Enhancement-mode; (5)High speed : tf = 0.30μs(Max) (IC = 75A), trr = 0.15μs(Max) (IF = 75A); (6)Low saturation voltage: VCE (sat) = 2.70V (Max) (IC = 75A).

Diagrams

MG75J2YS50 equivalent

MG750-1.00K-1%
MG750-1.00K-1%
Caddock Electronics Inc
RES 1K 1% HIGH VOLT AXIAl 7.5
Data Sheet
1-100: $7.91
MG750-10.0M-1%
MG750-10.0M-1%
Caddock
Thick Film Resistors - Through Hole 10M ohm 1%
Data Sheet
0-1: $23.15
MG750-402K-1%
MG750-402K-1%
Caddock Electronics Inc
RES 402K 1% HIGH VOLT AXIAL 7.5
Data Sheet
1-10: $15.81
MG75P
MG75P
Other

Data Sheet
Negotiable 
MG750-5.00K-1%
MG750-5.00K-1%
Caddock
Thick Film Resistors - Through Hole 5K ohm 1%
Data Sheet
0-1: $22.40
MG750-20M-1%
MG750-20M-1%
Caddock
Thick Film Resistors - Through Hole
Data Sheet
0-34: $23.15
34-50: $21.37
50-100: $15.43
100-200: $13.89