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The D-SILC is correlated with traps generation which is dependent on stress input and release. A degradation model based on the oxygen vacancies is provided to ...
2024/03/08 · A direct correlation is observed between this gate leakage and interface traps when stressed under both positive and negative gate polarity.
Abstract — Overshoot stress (stimulating the actual IC operating condition) on ultra-thin HfO2 (EOT~0.8 nm) high-κ layer is investigated, which reveals that ...
2024/07/15 · The dynamic stress-induced leakage current is correlated with traps generation and recovery, which is dependent on stress input and release. A ...
Overshoot stress impact on HfO2 high-κ layer dynamic SILC. · G. Wan · T. Duan · S. Zhang · L. Jiang · B. Tang · C. Zhao · H. Zhu · H. Yu ...
A New Strategy for Bearing Health Assessment with a Dynamic Interval Prediction Model. ... Overshoot stress impact on HfO2 high-κ layer dynamic SILC. ASICON 2015: ...
The stress induced leakage current (SILC) is correlated with the tunneling current through the oxide layer during electrical stress. A conductive path is ...
Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device. ... Overshoot stress impact on HfO2 high-κ layer dynamic ...
IEEE（The Institute of Electrical and Electronics Engineers） Fellow. 2022年12月 ～ 継続中. 日本学術振興会 ハイブリッド量子ナノ技術委員会委員.
2023/03/21 · ... Overshoot stress impact on HfO2 high-κ layer dynamic SILC 2015 IEEE 11th International Conference on ASIC (ASICON)。 4.L. Wu , K.S. Yew ...