Here, we present the first detailed study on forming free RS in PtSe 2 -based crosspoint (CP) memristors using CMOS-compatible electrodes. We find remarkably ...
Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors. Dennis ... PtSe2-based crosspoint (CP) memristors using CMOS-compatible electrodes.
In this paper, the resistive switching and neuromorphic behaviour of memristive devices based on parylene, a polymer both low-cost and safe for the human body, ...
Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors. Braun, Dennis; Lukas, Sebastian; Völkel, Lukas; Hartwig, Oliver; Prechtl, Maximilian ...
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%T Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors %C [Piscataway, NJ] %I IEEE %M RWTH-2022-08815 %P 2 Seiten %D 2022 %Z Hybride ...
Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors. Braun, D., Lukas, S., Völkel, L., Hartwig, O., Prechtl, M., Belete, M., Kataria, S ...
Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors. poster. Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors. DRC ...
The switching behavior can be explained by a unique. “conductive-point” model based on metal adsorption into intrinsic vacancies in TMDs (a point effect in.
Abstract. Non-volatile memristive devices based on two-dimensional (2D) layered materials provide an attractive alternative to conventional flash memory chips.
含まれない: PtSe2- | 必須にする:PtSe2-