Our results clearly indicate the drawbacks of nitridation for m-face MOS devices in terms of oxide leakage and V FB instability.
In the present study, we intensively investigated the interface properties and reliability (i.e., leakage current and VFB instability) of m-face SiC MOS ...
We systematically investigated the interface properties and reliability of NO nitrided SiC\( 1- 100) m-face MOS devices. Although nitridation at 1250°C ...
Investigation of reliability of NO nitrided SiC(1100) MOS devices ; 開始ページ: 3B.2-1 ; 終了ページ: 3B.2-5 ; 記述言語: 英語 ; 掲載種別: 研究論文（国際会議プロシー ...
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Investigation of reliability of NO nitrided SiC(1100) MOS devices. 2022 IEEE International Reliability Physics Symposium (IRPS). Takato Nakanuma; ,; Asato ...
We systematically investigated the interface properties and reliability of NO nitrided SiC$\left( {1\bar 100} \right)$ m-face MOS devices.
Impact of nitridation on the reliability of 4H-SiC (112̄0) MOS devices. T ... Investigation of reliability of NO nitrided SiC (1100) MOS devices. T ...
The leakage current and flat-band voltage ( V FB ) instability of NO-nitrided SiC (1120) (a-face) MOS devices were systematically investigated. Although NO ...
We investigated the reliability of nitrided SiC MOS devices in terms of oxide leakage and flatband voltage stability. Although nitrided MOS devices on non-basal ...
含まれない: 1100) | 必須にする:1100)