DRESDEN, Germany, Dec. 17, 2020 (GLOBE NEWSWIRE) -- SOLAYER today reported that it has demonstrated a Near Infrared Bandpass Filter (NIR BPF) with superior filter properties, enabled by the novel ...

The success comes from using the same traditional fabrication method while adding a metal layer between the fabricated a-Si:H TFSCs and the underlying Si/SiO2 wafer. After numerous attempts and ...

of 10 nm SiO2 on a p-type wafer, spin-coating of GQDs on the SiO2 layer, and IBSD of 20 nm SiO2 on the GQD layer. The presence of almost a single array of GQDs at a distance of ~13 nm from the SiO2/Si ...

At the heart of this revolution is the 220nm device layer SOI wafer — a critical substrate that facilitates the fabrication of compact, high-performance photonic components. Why 220nm SOI Wafers ...

The approach involves fabricating silicon dioxide (SiO2) microdisks which sit on a silicon pedestal etched from a commercial silicon wafer. A layer of zinc oxide (ZnO), approximately 55 nm thick, is ...

strong atomic layer bonding of semiconductor wafers using SiGen Plasma Activation Technology and (2) efficient room temperature cleaving of layers using its proprietary Room-Temperature Controlled ...

At the heart of this revolution is the 220nm device layer SOI wafer — a critical substrate that facilitates the fabrication of compact, high-performance photonic components. Why 220nm SOI Wafers Are ...