4. The C-V characteristic exhibited by an MOS-C is displayed in Figure 3. a) Is the semiconductor component of the MOS-C doped n-type or p-type? Explain. b) Draw the MOS-C energy band diagram corresponding to point (2) on the C-V characteristic. c) Draw the block charge diagram corresponding to point (1) on the C-V characteristic. d) If the area of the MOS-C is 3X103 cm², what is the oxide thickness (x.)? e) Determine WT. obtain the 20pF- 100 pF 0 Vo Figure 3 no) PHYSICAL CONSTANTS Symbol Name Electronic charge (magnitude) Permittivity of free space Boltzmann constant Planck constant Value 1.60 10-19 coul 8.85 x 10-14 farad/cm 8.617 x 10-5 eV/K 6.63 X 10 34 joule-sec 9.11 × 10-31 kg E0 k h mo Electron rest mass kT Thermal energy kTlq Thermal voltage Ks Semiconductor dielectric constant 11.8 0.0259 eV (T= 300 K) = 0.0259 V (T 300 K)

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Chapter4: Transmission Line Parameters
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4. The C-V characteristic exhibited by an MOS-C is displayed in Figure 3.
a) Is the semiconductor component of the MOS-C doped n-type or p-type? Explain.
b) Draw the MOS-C energy band diagram corresponding to point (2) on the C-V characteristic.
c) Draw the block charge diagram corresponding to point (1) on the C-V characteristic.
d) If the area of the MOS-C is 3X103 cm², what is the oxide thickness (x.)?
e) Determine WT.
obtain the
20pF-
100 pF
0
Vo
Figure 3
Transcribed Image Text:4. The C-V characteristic exhibited by an MOS-C is displayed in Figure 3. a) Is the semiconductor component of the MOS-C doped n-type or p-type? Explain. b) Draw the MOS-C energy band diagram corresponding to point (2) on the C-V characteristic. c) Draw the block charge diagram corresponding to point (1) on the C-V characteristic. d) If the area of the MOS-C is 3X103 cm², what is the oxide thickness (x.)? e) Determine WT. obtain the 20pF- 100 pF 0 Vo Figure 3
no)
PHYSICAL CONSTANTS
Symbol
Name
Electronic charge (magnitude)
Permittivity of free space
Boltzmann constant
Planck constant
Value
1.60
10-19 coul
8.85 x 10-14 farad/cm
8.617 x 10-5 eV/K
6.63 X 10 34 joule-sec
9.11 × 10-31 kg
E0
k
h
mo
Electron rest mass
kT
Thermal energy
kTlq
Thermal voltage
Ks
Semiconductor dielectric constant
11.8
0.0259 eV (T= 300 K)
=
0.0259 V (T 300 K)
Transcribed Image Text:no) PHYSICAL CONSTANTS Symbol Name Electronic charge (magnitude) Permittivity of free space Boltzmann constant Planck constant Value 1.60 10-19 coul 8.85 x 10-14 farad/cm 8.617 x 10-5 eV/K 6.63 X 10 34 joule-sec 9.11 × 10-31 kg E0 k h mo Electron rest mass kT Thermal energy kTlq Thermal voltage Ks Semiconductor dielectric constant 11.8 0.0259 eV (T= 300 K) = 0.0259 V (T 300 K)
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